may 2006 ? 2006 fairchild semiconductor corporation FDFMA3N109 rev b(w) FDFMA3N109 integrated n-channel powertrench ? mosfet and schottky diode general description this device is designed specif ically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. it features a mosfet with low input capacitance, total gate charge and on- state resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maxi mize boost efficiency. the microfet 2x2 package o ffers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. features mosfet: ? 2.9 a, 30 v r ds(on) = 123 m ? @ v gs = 4.5 v r ds(on) = 140 m ? @ v gs = 3.0 v r ds(on) = 163 m ? @ v gs = 2.5 v schottky: ? v f < 0.46 v @ 500ma ? low profile ? 0.8 mm maximum ? in the new package microfet 2x2 mm ? rohs compliant 3 2 1 4 5 6 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v ds drain-source voltage 30 v v gs gate-source voltage 12 v drain current ? continuous (t c = 25c, v gs = 4.5v) 2.9 ? continuous (t c = 25c, v gs = 2.5v) 2.7 i d ? pulsed 10 a power dissipation for single operation (note 1a) 1.5 p d power dissipation for single operation (note 1b) 0.65 w t j , t stg operating and storage temperature ?55 to +150 c v rrm schottky repetitive peak reverse voltage 28 v i o schottky average forward current 1 a thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 83 r ja thermal resistance, junction-to-ambient (note 1b) 193 r ja thermal resistance, junction-to-ambient (note 1c) 101 r ja thermal resistance, junction-to-ambient (note 1d) 228 c/w package marking and ordering information device marking device reel size tape width quantity 109 FDFMA3N109 7?? 8mm 3000 units FDFMA3N109 integrated n-channel powertrench ? mosfet and schottky diode microfet 2x2 a k nc g d s pin 1 a nc d k d k g s 4 .com u datasheet
FDFMA3N109 rev b(w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c 25 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate?body leakage current v gs = 12 v, v ds = 0 v 10 a on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 0.4 1.0 1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25c ?3 mv/ c v gs = 4.5v, i d = 2.9a 75 123 v gs = 3.0v, i d = 2.7a 84 140 v gs = 2.5v, i d = 2.5a 92 163 v gs = 4.5v, i d = 2.9a, t c = 85c 95 166 v gs = 3.0v, i d = 2.7a, t c = 150c 138 203 r ds(on) static drain?source on?resistance v gs = 2.5v, i d = 2.5a, t c = 150c 150 268 m ? dynamic characteristics c iss input capacitance 190 220 pf c oss output capacitance 30 40 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 20 30 pf r g gate resistance v gs = 0 v, f = 1.0 mhz 4.6 ? switching characteristics (note 2) t d(on) turn?on delay time 6 12 ns t r turn?on rise time 8 16 ns t d(off) turn?off delay time 12 21 ns t f turn?off fall time v dd = 15 v, i d = 1 a, v gs = 4.5 v, r gen = 6 ? 2 4 ns q g total gate charge 2.4 3.0 nc q gs gate?source charge 0.35 nc q gd gate?drain charge v ds = 15 v, i d = 2.9 a, v gs = 4.5 v 0.75 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.9 a i s = 2.0 a 0.9 1.2 v sd drain?source diode forward voltage i s = 1.1 a 0.8 1.2 v t rr diode reverse recovery time 10 ns q rr diode reverse recovery charge i f = 2.9 a, di f /dt = 100 a/s 2 nc schottky diode characteristics 10 100 a i r reverse leakage v r = 28 v t j = 25c t j = 85c 0.07 4.7 ma 0.50 0.57 v f forward voltage i f = 1 a t j = 25c t j = 85c 0.49 0.60 v 0.40 0.46 v f forward voltage i f = 500 ma t j = 25c t j = 85c 0.36 0.43 v FDFMA3N109 integrated n-channel powertrench ? mosfet and schottky diode 4 .com u datasheet
FDFMA3N109 rev b(w) electrical characteristics t a = 25c unless otherwise noted notes: 1. r ja is determined with the device mounted on a 1 in 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ja is determined by the user's board design. (a) mosfet r ja = 83c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb (b) mosfet r ja = 193c/w when mounted on a minimum pad of 2 oz copper (c) schottky r ja = 101c/w when mounted on a 1in 2 pad of 2 oz copper, 1.5? x 1.5? x 0.062? thick pcb (d) schottky r ja = 228c/w when mounted on a minimum pad of 2 oz copper a) 83 o c/w when mounted on a 1in 2 pad of 2 oz copper b) 193 o c/w when mounted on a minimum pad of 2 oz copper c)101 o c/w when mounted on a 1in 2 pad of 2 oz copper b) 228 o c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% FDFMA3N109 integrated n-channel powertrench ? mosfet and schottky diode 4 .com u datasheet
FDFMA3N109 rev b(w) typical characteristics 0 2 4 6 8 10 00.511.522.53 v ds , drain-source voltage (v) i d , drain current (a) 2.5v 2.0v v gs = 4.5v 3.5v 2.9v 1.5v 2.7v 0.8 1 1.2 1.4 1.6 1.8 0246810 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.0v 4.0v 3.5v 4.5v 2.5v 2.9v 2.7v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 2.9a v gs = 4.5v 0.04 0.08 0.12 0.16 0.2 0.24 0246810 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 1.45a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 2 4 6 8 10 0.511.522.53 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDFMA3N109 integrated n-channel powertrench ? mosfet and schottky diode 4 .com u datasheet
FDFMA3N109 rev b(w) typical characteristics 0 2 4 6 8 10 0123456 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 2.9a v ds = 10v 15v 20v 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.001 0.01 0.1 1 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v f , forward voltage (v) i f , forward leakage current (a) t j = 25 o c t j = 125 o c 0.000001 0.00001 0.0001 0.001 0.01 0.1 0 5 10 15 20 25 30 v r , reverse voltage (v) i r , reverse leakage current (a) t j = 25 o c t j = 125 o c t j = 100 o c figure 9. schottky diode forward voltage. figure 10. schottky diode reverse current. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja =193c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal char acterization performed using the c onditions described in note 1b. transient thermal response will change depending on the circuit board design. FDFMA3N109 integrated n-channel powertrench ? mosfet and schottky diode 4 .com u datasheet
FDFMA3N109 rev b(w) FDFMA3N109 integrated n-channel powertrench ? mosfet and schottky diode 4 .com u datasheet
rev. i19 trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for us e as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or s ystems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause t he failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specif ications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without not ice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. 4 .com u datasheet
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